Future Trends in Wide-Bandgap Semiconductor Materials for EV Power Electronics

Abstract:

Wide-bandgap (WBG) semiconductors, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are revolutionizing the field of electric vehicle (EV) power electronics. Such materials have more favourable electrical, thermal, and mechanical properties than typical silicon devices, allowing for improvements in the powertrain system, charging system, and vehicle performance. The auto industry today has well-established materials, probably the next big success. This mini-review examines the current situation of WBG materials in the world of EVs, whose integration with power electronics (e.g., inverters, motor drives, DC-DC converters, and onboard chargers) has been significant. As well, the recent advanced materials of WBG (such as diamond and Gallium Oxide (Ga2O3)) are mentioned as having a future to improve the functionality of EV power systems even further. Significant technological innovation in material scaling, device performance/reliability and scale of manufacture capability is also noted, illustrating the prospect of WBG semiconductors to deliver cost reductions to the EV system and increase its efficiency. The WBG technologies are also likely to form the future of electric mobility as they facilitate quicker charging, better range, and the efficient conversion of power.